Air Liquide Electronics strengthens patent portfolio on Zirconium based high-k dielectric precursors
Air Liquide Electronics today announced that the Chinese Patents Office has granted a patent related to the application of ZyALD™ in semiconductor processing. This follows the recent granting of patents in several other states, including South Korea, Singapore, Taiwan and several European countries, with a favorable outcome also expected in various other jurisdictions. The usage of ZyALD™ and other similar molecules for high-k deposition is now covered by 11 granted patents worldwide and 13 additional pending applications.
ZyALD™ – Tris(dimethylamino)cyclopentadienyl Zirconium – is a key zirconium precursor (functionalized molecule) in the family of molecules addressed in the granted patents. It is engineered to enable high temperature Atomic Layer Deposition (ALD) processes for deposition of zirconium based dielectrics in the manufacturing of semiconductors. First introduced to the industry in 2006, ZyALD™ has now become the mainstream high-k precursor in DRAM manufacturing worldwide, replacing conventional molecules which do not provide the required functionalities at high temperatures. ZyALD™ has also found applications for the high-k layer in for BEOL MIM structure and e-DRAM.
With its superior physico-chemical properties, including its high volatility, thermal stability and high growth rate, ZyALD™ has served as a drop-in replacement, allowing end users to transition seamlessly from conventional chemistries while benefiting from an expanded process window in the manufacturing process.
ZyALD™ is manufactured at Air Liquide's ALOHA™ Manufacturing centers, which are located in California (US), Chalon (France) and Tsukuba (Japan), serving the global customer base. Addressing the challenges of advanced semiconductor manufacturing, the ALOHA product line of precursors has helped increase the electrical and mechanical performance of film materials used in microelectronics fabrication, accelerating a variety of emerging applications. The ALOHA product line includes all the advanced CVD and ALD precursors for sub-45 nm device manufacturing, with capabilities ranging from ton-level of silicon precursors and high-k materials down to a few grams of experimental R&D products. ALOHA™ precursors come in a comprehensive package including ultra-high purity canisters, extremely tight specifications, backed by its world-class Air Liquide-BALAZS™ analytical expertise, and when applicable, with the license to use the precursor according to Air Liquide's intellectual property rights.
Jean-Marc Girard, CTO of Air Liquide Electronics said "Air Liquide is strongly committed to bringing innovative products to our customers, enabling their ever more challenging process requirements. ZyALD™ is one of the highly successful products introduced by ALOHA™, and we expect our continued investment in R&D to bring additional unique products to the market.”